PART |
Description |
Maker |
FF75R10KN FF150R10KN FF100R10KN FS50R10KF2 FS8R06K |
TRANSISTOR | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 75A I(C) | M:HL093HD5.6 TRANSISTOR | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 150A I(C) | M:HL093HW048 TRANSISTOR | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 100A I(C) | M:HL093HW048 TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1KV V(BR)CES | 50A I(C) TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 8A I(C) 晶体管| IGBT功率模块| 3 - PH值大桥| 600V的五(巴西)国际消费电子展| 8A条一(c TRANSISTOR | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 15A I(C) | M:HL080HD5.3 晶体管| IGBT的|正陈|双| 1KV交五(巴西)国际消费电子展|5A一(c)|米:HL080HD5.3 TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 75A I(C) 晶体管| IGBT功率模块| 3 - PH值大桥| 600V的五(巴西)国际消费电子展| 75A条一(c
|
Delta Electronics, Inc. Fuji Electric Holdings Co., Ltd. Infineon Technologies AG
|
IRF7103Q IRF7103QTR IRF7103QN |
N-channel power MOSFET for anti-lock braking systems applications, 50V, 3A TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 50V V(BR)DSS | 3A I(D) | SO Power MOSFET(Vdss=50V) 50V Dual N-Channel HEXFET Power MOSFET in a SO-8 package 50V Single DUAL-Channel HEXFET Power MOSFET in a SO-8 package
|
International Rectifier
|
WP-MK-X2011-868 RS-MK-X2010 WP-MK-X2010-434 WP-MK- |
MOSFET DUAL N-CHAN 20V SOT-26 TRANS NPN BIPOLAR 300MW SOT26 TRANS PNP BIPOLAR 300MW SOT26 TRANSISTOR NPN 40V SOT363 High Integrity FM Transceiver
|
Electronic Theatre Controls, Inc. List of Unclassifed Manufacturers ETC[ETC] Round Solutions
|
HS9-4424BRH-8 HS9-4424BRH-Q HS9-4424RH HS9-4424RH- |
SWITCH SLIDE DPDT RT ANG L=9MM 辐射加固双,非逆变电源的MOSFET驱动 Radiation Hardened Dual, Non-Inverting
Power MOSFET Drivers(抗辐射双路同相功率MOSFET驱动 Radiation Hardened Dual, Non-Inverting Power MOSFET Drivers Radiation Hardened Dual/ Non-Inverting Power MOSFET Drivers
|
Intersil, Corp. Intersil Corporation
|
MUX28BTC883 |
36V; 25mA; 16-channel/dual 8-chan JFET analog multiplexer. For geometry correction in high-resolution CRT displays
|
Analog Devices
|
IRF9910 |
20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package Dual SO-8 MOSFET for POL converters in desktop, servers, graphics cards, game consoles and set-top box
|
IRF[International Rectifier]
|
NTMD2P01R2 NTMD2P01R2-D |
Power MOSFET -2.3 Amps, -16 Volts Dual SO-8 Package Power MOSFET -2.3 Amps, -16 Volts Dual SO Package(-2.3A16V,双通道SO-8封装的功率MOSFET) 2.3 A, 16 V, 0.1 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET
|
ON Semiconductor
|
ITZ08F12P ITZ08F12B |
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 16A I(C) | TO-247 TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 16A I(C) | TO-220AB 晶体管| IGBT的|正陈| 1.2KV五(巴西)国际消费电子展| 16A条一(c)| TO - 220AB现有
|
Microsemi, Corp.
|
NTMD6N04R2 NTMD6N04R2G |
40V, 6A, Dual S0-8, N-Ch 4.6 A, 40 V, 0.034 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET Power MOSFET 40 V, 5.8 A, Dual N-Channel SOIC-8
|
ON Semiconductor
|
OM6559SP1 OM6558SP1 OM6545SP1 |
TRANSISTOR | IGBT | N-CHAN | 1KV V(BR)CES | 25A I(C) | SIP 晶体管| IGBT的|正陈| 1KV交五(巴西)国际消费电子展|5A条(c)的|园区 TRANSISTOR | IGBT | N-CHAN | 1KV V(BR)CES | 21A I(C) | SIP 晶体管| IGBT的|正陈| 1KV交五(巴西)国际消费电子展| 21A条(c)的|园区 TRANSISTOR | IGBT | N-CHAN | 500V V(BR)CES | 49A I(C) | SIP 晶体管| IGBT的|正陈| 500V五(巴西)国际消费电子展|9A一(c)|园区
|
Electronic Theatre Controls, Inc. OKI SEMICONDUCTOR CO., LTD.
|
APTM20TDUM16P APTM20TDUM16PG |
Triple dual common source MOSFET Power Module 104 A, 200 V, 0.016 ohm, 6 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
|
Microsemi, Corp. ADPOW[Advanced Power Technology] http://
|